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VP2450N3-G

Part No
VP2450N3-G
Manufacturer
Description
P-Channel Enhancement-Mode Vertical DMOS FET | MOSFET P-CH 500V 0.1A TO92-3
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Product Specification
SpecificationValue
Ambient Temperature Range High150 °C
Continuous Drain Current (ID)-100 mA
Drain to Source Breakdown Voltage-500 V
Drain to Source Resistance30 Ω
Drain to Source Voltage (Vdss)-500 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance190 pF
Max Operating Temperature150 °C
Max Power Dissipation740 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation740 mW
Rds On Max30 Ω
Rise Time25 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time10 ns
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight453.59237 mg
Height5.334 mm
Length5.21 mm
Width4.19 mm
Availability:

Available

MOQ: $100
Order Increment: 1 pcs
Shipping Information
Shipped from
UK, USA and EU
Expected Shipping Date

Lead Time
7-10 days
Shipping Charges
Free shipping on orders over $1000
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