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VP2206N3-G

Part No
VP2206N3-G
Manufacturer
Description
P-Channel Enhancement-Mode Vertical DMOS FET | MOSFET P-CH 60V 640MA TO92-3
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Product Specification
SpecificationValue
Continuous Drain Current (ID)640 mA
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance450 pF
Max Operating Temperature150 °C
Max Power Dissipation740 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation1 W
Rds On Max900 mΩ
Rise Time16 ns
Schedule B8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080
Turn-Off Delay Time16 ns
Turn-On Delay Time4 ns
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight453.59237 mg
Height5.33 mm
Length5.21 mm
Width4.19 mm
Availability:

Available

MOQ: $100
Order Increment: 1 pcs
Shipping Information
Shipped from
UK, USA and EU
Expected Shipping Date

Lead Time
7-10 days
Shipping Charges
Free shipping on orders over $1000
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