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VN0106N3-G

Part No
VN0106N3-G
Manufacturer
Description
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 3.0 Ohm3 TO-92 BAG | Microchip Technology Inc. VN0106N3-G
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Product Specification
SpecificationValue
Ambient Temperature Range High150 °C
Continuous Drain Current (ID)350 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance65 pF
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation1 W
Rds On Max3 Ω
Rise Time5 ns
Schedule B8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
Turn-Off Delay Time6 ns
Turn-On Delay Time3 ns
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Weight453.59237 mg
Height5.334 mm
Length5.21 mm
Width4.19 mm
Availability:

Available

MOQ: $100
Order Increment: 1 pcs
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Expected Shipping Date

Lead Time
7-10 days
Shipping Charges
Free shipping on orders over $1000
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