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USB10H

Part No
USB10H
Manufacturer
Description
Small Signal Field-Effect Transistor, 1.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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Product Specification
SpecificationValue
Continuous Drain Current (ID)1.9 A
Current Rating-1.9 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance170 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time9 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance441 pF
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
Power Dissipation960 mW
Rds On Max170 mΩ
Rise Time9 ns
Turn-Off Delay Time14 ns
Voltage Rating (DC)-20 V
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Availability:

Available

MOQ: $100
Order Increment: 1 pcs
Shipping Information
Shipped from
UK, USA and EU
Expected Shipping Date

Lead Time
7-10 days
Shipping Charges
Free shipping on orders over $1000
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