Generic image

STW55NM50N

Part No
STW55NM50N
Manufacturer
Description
N-channel 500V - 0.036Y - 54A - TO-247 Second generation MDmesh™ Power MOSFET
Datasheet
Test Report
Samples
Request for Quote
Product Specification
SpecificationValue
Continuous Drain Current (ID)54 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance54 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance5.8 nF
Max Operating Temperature150 °C
Max Power Dissipation350 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation350 W
Rds On Max54 mΩ
Resistance54 mΩ
Rise Time40 ns
Turn-Off Delay Time250 ns
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Availability:

Out of stock

MOQ: $100
Order Increment: 1 pcs
Shipping Information
Shipped from
UK, USA and EU
Expected Shipping Date

Lead Time
7-10 days
Shipping Charges
Free shipping on orders over $1000
Related Products
Request a Quantity Specific Quote

Enter your email to get datasheet.

Test Report
Samples
Request
Request a Quantity Specific Quote