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| Specification | Value |
|---|---|
| Ambient Temperature Range High | 110 °C |
| Collector Emitter Breakdown Voltage | 32 V |
| Collector Emitter Saturation Voltage | 400 mV |
| Collector Emitter Voltage (VCEO) | 70 V |
| Current | 1 A |
| Current Transfer Ratio | 22 % |
| Dark Current | 50 nA |
| Fall Time | 14 µs |
| Forward Current | 60 mA |
| Forward Voltage | 1.5 V |
| Input Current | 60 mA |
| Isolation Voltage | 3.75 kV |
| Max Collector Current | 100 mA |
| Max Input Current | 60 mA |
| Max Operating Temperature | 100 °C |
| Max Output Voltage | 70 V |
| Max Power Dissipation | 150 mW |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 100 mA |
| Output Type | Phototransistor |
| Output Voltage | 70 V |
| Power Dissipation | 250 mW |
| Reverse Breakdown Voltage | 6 V |
| Reverse Voltage | 6 V |
| Schedule B | 8541408000, 8541408000|8541408000, 8541408000|8541408000|8541408000, 8541408000|8541408000|8541408000|8541408000 |
| Turn-Off Delay Time | 23 µs |
| Turn-On Delay Time | 4.2 µs |
| Voltage | 70 V |
| Voltage Rating (DC) | 32 V |
| Case/Package | DIP |
| Contact Plating | Tin |
| Mount | Through Hole |
| Number of Pins | 6 |
| Height | 4.3 mm |
Available
