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2N1131

Part No
2N1131
Description
LOW POWER PNP SILICON TRANSISTOR | THROUGH-HOLE TRANSISTOR-SMALL SI
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Product Specification
SpecificationValue
Collector Base Voltage (VCBO)50 V
Collector Emitter Voltage (VCEO)40 V
Emitter Base Voltage (VEBO)5 V
Max Collector Current600 mA
Max Operating Temperature200 °C
Max Power Dissipation600 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation600 mW
Schedule B8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Availability:

Available

MOQ: $100
Order Increment: 1 pcs
Shipping Information
Shipped from
UK, USA and EU
Expected Shipping Date

Lead Time
7-10 days
Shipping Charges
Free shipping on orders over $1000
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